X-On Electronics has gained recognition as a prominent supplier of STP260N6F6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP260N6F6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP260N6F6 STMicroelectronics

Name: STP260N6F6
Brand: STMicroelectronics
SKU: STP260N6F6_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STP260N6F6 electronic component of STMicroelectronics

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Part No.	STP260N6F6
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 60V 0.0016 Ohm 180A DeepGATE VI
Datasheet:	STP260N6F6 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STP260N6F6 More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 3.2209	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 3.4779 10 : USD 3.1222	N/A Obsolete

0 MOQ : 1000 Multiples : 1000	1000 : USD 2.0392	N/A Obsolete

0 MOQ : 8 Multiples : 1	8 : USD 4.2928 10 : USD 3.8822	N/A Obsolete

0 MOQ : 6 Multiples : 1	6 : USD 6.4454 10 : USD 4.4809	N/A Obsolete

0 MOQ : 19 Multiples : 1	19 : USD 1.8238	N/A Obsolete

We are delighted to provide the STP260N6F6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP260N6F6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 , 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and IPAK packages Features Order codes V R max I DSS DS(on) D TAB TAB STI260N6F6 60 V < 0.003 120 A STP260N6F6 Low gate charge 3 3 2 Very low on-resistance 2 1 1 High avalanche ruggedness IPAK TO-220 Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET 4 DeepGATE technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order codes Marking Package Packaging STI260N6F6 IPAK 260N6F6 Tube STP260N6F6 TO-220 January 2012 Doc ID 17467 Rev 5 1/14 www.st.com 14 Contents STI260N6F6, STP260N6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 Doc ID 17467 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 120 A 120 A
Vds - Drain-Source Breakdown Voltage 75 V 75 V
Rds On - Drain-Source Resistance 2.4 mOhms 2.4 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Pd - Power Dissipation 300 W 300 W
Mounting Style through hole through hole
Package / Case TO - 220 TO - 220
Packaging Tube Tube
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 183 nC 183 nC
Tradename stripfet stripfet
Series stp260n6f6 stp260n6f6
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 120 A 120 A
Drain-Source Breakdown Voltage 75 V 75 V
Gate-Source Breakdown Voltage 20 V 20 V
Power Dissipation 300 W 300 W
Rds On 2.4 mohms 2.4 mohms
Fall Time 62.6 ns 62.6 ns
Gate Charge Qg 183 nC 183 nC
Rise Time 165 ns 165 ns
Factory Pack Quantity : 50 50
Configuration single single
Transistor Type 1 n - channel 1 n - channel
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000