X-On Electronics has gained recognition as a prominent supplier of STP26N65DM2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP26N65DM2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP26N65DM2 STMicroelectronics

STP26N65DM2 electronic component of STMicroelectronics
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Part No.STP26N65DM2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET
Datasheet: STP26N65DM2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.564 ea
Line Total: USD 3.56 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1000
Multiples : 1
1000 : USD 2.6384
2000 : USD 2.612
2500 : USD 2.5855
3000 : USD 2.5591
4000 : USD 2.5339
5000 : USD 2.428
10000 : USD 2.4028
20000 : USD 2.3789
50000 : USD 2.3612

0
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 3.564
10 : USD 2.9408
30 : USD 2.4905
100 : USD 2.118
500 : USD 2.0547
1000 : USD 2.0231

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 5.7956
10 : USD 3.7903

   
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We are delighted to provide the STP26N65DM2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP26N65DM2 and other electronic components in the MOSFETs category and beyond.

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STP26N65DM2 Datasheet N-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 package Features Order code V R max. I P DS DS(on) D TOT TAB STP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 Low on-resistance TO-220 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STP26N65DM2 Product summary Order code STP26N65DM2 Marking 26N65DM2 Package TO-220 Packing Tube DS12621 - Rev 1 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STP26N65DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 20 case I A D Drain current (continuous) at T = 100 C 12.6 case (1) I Drain current (pulsed) 53 A DM P Total dissipation at T = 25 C 170 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 20 A, di/dt=900 A/s, V peak < V , V = 400 V SD DS (BR)DSS DD 3. V 520 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.74 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 3 A AR (2) E Single pulse avalanche energy 530 mJ AS 1. Pulse width is limited by T Jmax 2. Starting T = 25 C, I = I , V = 50 V j D AR DD DS12621 - Rev 1 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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