X-On Electronics has gained recognition as a prominent supplier of NVTFS5116PLWFTWG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVTFS5116PLWFTWG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVTFS5116PLWFTWG ON Semiconductor

NVTFS5116PLWFTWG electronic component of ON Semiconductor
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Part No.NVTFS5116PLWFTWG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH
Datasheet: NVTFS5116PLWFTWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4719 ea
Line Total: USD 2.47 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.8703
10000 : USD 0.8616
15000 : USD 0.853
20000 : USD 0.8445
25000 : USD 0.836
30000 : USD 0.8277
50000 : USD 0.8194
100000 : USD 0.8112
250000 : USD 0.803

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.7498

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.4719
10 : USD 0.9077
100 : USD 0.7242
250 : USD 0.7023
500 : USD 0.6496
1000 : USD 0.5938
2500 : USD 0.5591
5000 : USD 0.5581
10000 : USD 0.5322

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the NVTFS5116PLWFTWG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVTFS5116PLWFTWG and other electronic components in the MOSFETs category and beyond.

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NVTFS5116PL MOSFET Power, Single P-Channel -60 V, -14 A, 52 m Features Small Footprint (3.3 x 3.3 mm) for Compact Design NVTFS5116PL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1 3 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 7 A 37 52 m DS(on) GS D V = 4.5 V, I = 7 A 51 72 GS D Forward Transconductance g V = 15 V, I = 5 A 11 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 1258 pF iss GS V = 25 V DS Output Capacitance C 127 oss Reverse Transfer Capacitance C 84 rss Total Gate Charge Q 14 nC G(TOT) Threshold Gate Charge Q 1 nC G(TH) V = 4.5 V, V = 48 V, GS DS I = 7 A D GatetoSource Charge Q 4 GS GatetoDrain Charge Q 8 GD Total Gate Charge Q V = 10 V, V = 48 V, 25 nC G(TOT) GS DS I = 7 A D SWITCHING CHARACTERISTICS (Note 6) ns TurnOn Delay Time t 14 d(on) Rise Time t 68 r V = 4.5 V, V = 48 V, GS DS I = 7 A D TurnOff Delay Time t 24 d(off) Fall Time t 36 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.79 1.20 V SD GS J I = 7 A S T = 125C 0.64 J Reverse Recovery Time t 21 ns RR Charge Time t 16 a V = 0 V, dI /dt = 100 A/ s, GS S I = 7 A S Discharge Time t 5 b Reverse Recovery Charge Q 24 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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