NVTFS5116PL MOSFET Power, Single P-Channel -60 V, -14 A, 52 m Features Small Footprint (3.3 x 3.3 mm) for Compact Design NVTFS5116PL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1 3 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 7 A 37 52 m DS(on) GS D V = 4.5 V, I = 7 A 51 72 GS D Forward Transconductance g V = 15 V, I = 5 A 11 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 1258 pF iss GS V = 25 V DS Output Capacitance C 127 oss Reverse Transfer Capacitance C 84 rss Total Gate Charge Q 14 nC G(TOT) Threshold Gate Charge Q 1 nC G(TH) V = 4.5 V, V = 48 V, GS DS I = 7 A D GatetoSource Charge Q 4 GS GatetoDrain Charge Q 8 GD Total Gate Charge Q V = 10 V, V = 48 V, 25 nC G(TOT) GS DS I = 7 A D SWITCHING CHARACTERISTICS (Note 6) ns TurnOn Delay Time t 14 d(on) Rise Time t 68 r V = 4.5 V, V = 48 V, GS DS I = 7 A D TurnOff Delay Time t 24 d(off) Fall Time t 36 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.79 1.20 V SD GS J I = 7 A S T = 125C 0.64 J Reverse Recovery Time t 21 ns RR Charge Time t 16 a V = 0 V, dI /dt = 100 A/ s, GS S I = 7 A S Discharge Time t 5 b Reverse Recovery Charge Q 24 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.