BSS138DWQ
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary Features
Low On-Resistance
I Max
D
V R Max
(BR)DSS DS(ON)
T = +25C Low Gate Threshold Voltage
A
Low Input Capacitance
3.5 @ V = 10V
50V GS 200mA
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Notes 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET is designed to minimize the on-state resistance
PPAP Capable (Note 4)
(R ), yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Mechanical Data
Applications
Load Switch
Case: SOT-363
Case Material: Molded Plastic. Green Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
SOT363 D G S
2 1 1
S G D
2 2 1
Top View
Top View
Internal Schematic
Ordering Information (Note 5)
Part Number Case Packaging
BSS138DWQ-7 SOT363 3,000/Tape & Reel
BSS138DWQ-13 SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
BSS138DWQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol BSS138DW Units
Drain-Source Voltage V 50 V
DSS
Drain-Gate Voltage (Note 8) V 50 V
DGR
Gate-Source Voltage Continuous V 20 V
GSS
Drain Current (Note 6) Continuous 200 mA
ID
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol BSS138DW Units
Total Power Dissipation (Note 6) P 200 mW
D
Thermal Resistance, Junction to Ambient R 625 C/W
JA
Operating and Storage Temperature Range -55 to +150 C
T , T
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 50 75 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 0.5 A V = 50V, V = 0V
DSS DS GS
Gate-Body Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 0.5 1.2 1.5 V
VGS(TH) VDS = VGS, ID = 250A
Static Drain-Source On-Resistance R 1.4 3.5 V = 10V, I = 0.22A
DS(ON) GS D
Forward Transconductance g 100 mS V =25V, I = 0.2A, f = 1.0KHz
FS DS D
DYNAMIC CHARACTERISTICS
Input Capacitance 50 pF
C
ISS
Output Capacitance 25 pF
C V = 10V, V = 0V, f = 1.0MHz
OSS DS GS
Reverse Transfer Capacitance C 8.0 pF
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time t 20 ns V = 30V, I = 0.2A,
D(ON) DD D
Turn-Off Delay Time 20 ns
t R = 50
D(OFF) GEN
Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown at