AUIRLS8409-7P Features V 40V DSS Advanced Process Technology R typ. 0.50m DS(on) Logic Level Gate Drive max. Ultra Low On-Resistance 0.75m 175C Operating Temperature I 500A D (Silicon Limited) Fast Switching I 240A D (Package Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast 2 D Pak 7 Pin switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and wide variety of other applications. Gate Drain Source Applications Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid Heavy Loads DC-DC Converter Standard Pack Base Part Number Package Type Complete Part Number Form Quantity AUIRLS8409-7P Tube 50 2 AUIRLS8409-7P D Pak-7PIN Tape and Reel Left 800 AUIRLS8409-7TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 500 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 353 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 240 D C GS Pulsed Drain Current 1200 I DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 16 V GS T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy 730 AS (Thermally Limited) mJ Single Pulse Avalanche Energy 1580 E AS (Tested) I Avalanche Current A AR See Fig. 14, 15, 22a, 22b E Repetitive Avalanche Energy mJ AR HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2016-02-15 AUIRLS8409-7P Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.4 R JC C/W Junction-to-Ambient (PCB Mount) 40 R JA Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.033 V/C Reference to 25C, I = 5.0mA V / T D (BR)DSS J 0.50 0.75 V = 10V, I = 100A m GS D 0.60 0.85 V = 5.5V, I = 50A R Static Drain-to-Source On-Resistance m DS(on) GS D 0.75 1.10 V = 4.5V, I = 50A m GS D V Gate Threshold Voltage 1.0 2.4 V V = V , I = 250A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS R Internal Gate Resistance 2.0 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 220 S V = 10V, I = 100A DS D Q Total Gate Charge 177 266 I = 100A g D Q Gate-to-Source Charge 65 V = 20V DS gs nC Q Gate-to-Drain Mille) Charge 80 V = 4.5V GS gd Q Total Gate Charge Sync. (Q - Q) 97 sync g gd t Turn-On Delay Time 14 V = 20V d(on) DD I = 100A t Rise Time 71 r D ns t Turn-Off Delay Time 260 R = 2.7 d(off) G t Fall Time 115 V = 10V f GS C Input Capacitance 16488 V = 0V iss GS C Output Capacitance 1990 V = 25V oss DS C Reverse Transfer Capacitance 1373 pF = 1.0 MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 2323 V = 0V, V = 0V to 32V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 2875 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current 500 MOSFET symbol I A S (Body Diode) showing the Pulsed Source Current 1200 integral reverse I A SM (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 1.2 V T = 25C, I = 100A, V = 0V SD J S GS dv/dt Peak Diode Recovery 2.4 V/ns T = 175C, I = 100A, V = 40V J S GS 52 T = 25C J V = 34V, R t Reverse Recovery Time ns rr 57 T = 125C J I = 100A F 97 T = 25C J di/dt = 100A/s Q Reverse Recovery Charge nC rr 97 T = 125C J I Reverse Recovery Current 2.8 A T = 25C RRM J Notesandareonpage7 2 2016-02-15