TSM7P06CP 60V P-Channel Power MOSFET TO-252 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Drain 3. Source V -60 V DS V = -10V 180 GS R (max) m DS(on) V = -4.5V GS 220 Q 8.2 nC g Block Diagram Ordering Information Ordering code Package Packing TSM7P06CP ROG TO-252 2.5kpcs / 13 Reel Note: Halogen-free according to IEC 61249-2-21 definition P-Channel MOSFET o Absolute Maximum Ratings (T =25 C unless otherwise noted) C Limit Parameter Symbol Unit -60 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS -7 T = 25C A C Continuous Drain Current I D -4.4 T = 100C A C (Note 1) -28 Pulsed Drain Current I A DM (Note 2) Single Pulse Avalanche Energy E 32 mJ AS (Note 1) -8 Single Pulse Avalanche Current I A AS o Power Dissipation T = 25 C P 15.6 W C D Operating Junction Temperature T 150 C J o -50 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R 8 JC o C/W Thermal Resistance - Junction to Ambient R 62 JA 1/5 Version: B1802 TSM7P06CP 60V P-Channel Power MOSFET o Electrical Specifications (T =25 C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV -60 -- -- V GS D DSS V = -10V, I = -3A -- 153 180 GS D Drain-Source On-State Resistance R m DS(ON) V = -4.5V, I = -1.5A -- 198 220 GS D Gate Threshold Voltage V = V , I = -250A V DS GS D GS(TH) -1.2 -1.6 -2.5 V V = -60V, V = 0V -- -- -1 DS GS Zero Gate Voltage Drain Current I A V = -48V, V = 0V, DSS DS GS -- -- -10 T = 125C C Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS (Note 3) Forward Transconductance V = -10V, I = -2A DS D g -- 3 -- S fs Dynamic (Note 3,4) Total Gate Charge Q -- 8.2 -- g V = -30V, I = -3A, (Note 3,4) DS D Gate-Source Charge Q -- 1.8 -- nC gs V = -10V GS (Note 3,4) Gate-Drain Charge Q gd -- 1.5 -- Input Capacitance C iss -- 425 -- V = -30V, V = 0V, DS GS Output Capacitance C -- 35 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 20 -- rss Switching (Note 3,4) Turn-On Delay Time t -- 5.2 -- d(on) (Note 3,4) Turn-On Rise Time t -- 19 -- r V = -30V, I = -1A, DD D ns (Note 3,4) Turn-Off Delay Time R =6 t GEN -- 35 -- d(off) (Note 3,4) Turn-Off Fall Time t f -- 10.6 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- -7 A S Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode the MOSFET I -- -- -28 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = -1A V -- -- -1 V GS S SD Note: 1. Pulse width limited by safe operating area 2. L=1mH, I =-8A, V = -25V, R = 25, Starting T = 25C AS DD G J 3. Pulse test: pulse width 300s, duty cycle 2% 4. Switching time is essentially independent of operating temperature. 2/5 Version: B1802