Green DMPH1006UPS 12V 175C P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature I D Environments BV R DSS DS(ON) T = +25C A 100% Unclamped Inductive Switching Ensures More Reliable 6m V = -4.5V -80A GS and Robust End Application -12V 8m V = -2.5V -70A GS High Conversion Efficiency Low R Minimizes On State Losses DS(ON) Low Input Capacitance Description and Applications Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high-efficiency power management applications. An Automotive-Compliant Part is Available Under Separate Datasheet (DMPH1006UPSQ) Notebook Battery Power Management DC-DC Converters Mechanical Data Load Switch Case: PowerDI5060-8 Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 S D Pin1 S D D S G D G S Top View Top View Pin Configuration Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMPH1006UPS-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMPH1006UPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -12 V V DSS Gate-Source Voltage 8 V V GSS T = +25C -80 C Continuous Drain Current (Note 7) V = -4.5V I A GS D -60 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -140 A DM Maximum Continuous Body Diode Forward Current (Note 6) -3.6 A I S Avalanche Current, L=0.1mH (Note 8) -18 A I AS Avalanche Energy, L=0.1mH (Note 8) -17 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.8 W P D Steady State 86 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 74 Total Power Dissipation (Note 6) 3.2 W P D Steady State 47 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 40 C/W Thermal Resistance, Junction to Case (Note 7) R 1.0 JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -12 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -12V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -0.4 -1 V V V = V , I = -250A GS(TH) DS GS D 4 6 V = -4.5V, I = -15A GS D Static Drain-Source On-Resistance R m DS(ON) 5 8 V = -2.5V, I = -10A GS D Diode Forward Voltage V -0.7 -1.1 V SD V = 0V, I = -1A GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 6,334 C iss V = -10V, V = 0V DS GS 1094 Output Capacitance C pF oss f = 1MHz 895 Reverse Transfer Capacitance C rss 3.5 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 124 Total Gate Charge (V = -8V) Q GS g 72 Total Gate Charge (V = -4.5V) Q GS g nC V = -10V, I = -20A DD D 9 Gate-Source Charge Q gs Gate-Drain Charge 17 Q gd Turn-On Delay Time 11 t D(ON) Turn-On Rise Time 21 t V = -4.5V, V = -10V, R GS DD ns Turn-Off Delay Time 105 t Rg = 1 ID = -10A D(OFF) 94 Turn-Off Fall Time t F 27 Reverse Recovery Time t ns I = -10A, di/dt = -100A/s RR F 10 Reverse Recovery Charge Q nC I = -10A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMPH1006UPS August 2016 Diodes Incorporated www.diodes.com Document number: DS37404 Rev. 2 - 2