DMPH6050SSDQ
175C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to +175C ideal for high ambient temperature
I
D
BV R
DSS DS(ON) Max
environments
T = +25C
A
100% Unclamped Inductive Switching ensures more reliable
-5.2A
48m @ V = -10V
GS
-60V
and robust end application
60m @ V = -4.5V -4.7A
GS
Low R minimises power losses
DS(ON)
Low Qg minimises switching losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Description and Applications
Halogen and Antimony Free. Green Device (Note 3)
This MOSFET is designed to meet the stringent requirements of
Qualified to AEC-Q101 Standards for High Reliability
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP Capable (Note 4)
PPAP and is ideal for use in:
Mechanical Data
Engine Management Systems
Body Control Electronics
Case: SO-8
DC-DC Converters
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (Approximate)
SO-8
D1 D2
SO-8
S1 D1
Pin1
G1 D1
G1 G2
S2
D2
G2 D2
S1 S2
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 5)
Part Number Case Packaging
DMPH6050SSDQ-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMPH6050SSDQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage -60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C -5.2
A
Continuous Drain Current (Note 7) V = -10V I A
GS D
State -3.7
T = +100C
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -35 A
DM
Maximum Continuous Body Diode Forward Current (Note 7) -2.0 A
I
S
Avalanche Current (Note 8) L = 0.1mH -25 A
I
AS
Avalanche Energy (Note 8) L = 0.1mH 33 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) T = +25C P 1.5 W
A D
Steady state
103
Thermal Resistance, Junction to Ambient (Note 6) C/W
R
JA
t<10s 64
Total Power Dissipation (Note 7) T = +25C P 2.0 W
A D
Steady state
75
Thermal Resistance, Junction to Ambient (Note 7) R
JA
t<10s
47 C/W
Thermal Resistance, Junction to Case (Note 7) 13
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V
J DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage -1.0 -3.0 V
V V = V , I = -250A
GS(TH) DS GS D
34 48
V = -10V, I = -5A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
44 60
V = -4.5V, I = -4A
GS D
Diode Forward Voltage -0.7 -1.2 V
V V = 0V, I = -1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance pF
C 1525
iss
V = -30V, V = 0V,
DS GS
Output Capacitance C 90 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 70 pF
rss
16
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
14.5
Total Gate Charge (V = -4.5V) Q nC
GS g
30.6
Total Gate Charge (V = -10V) Q nC
GS g
V = -30V, I = -5A
DS D
Gate-Source Charge 4.9 nC
Q
gs
Gate-Drain Charge 5.2 nC
Q
gd
Turn-On Delay Time 5.3 ns
t
D(ON)
Turn-On Rise Time 15.4 ns
t V = -10V, V = -30V,
R GS DS
Turn-Off Delay Time 79.2 ns
t R = 3, I = -5A
D(OFF) G D
45.3
Turn-Off Fall Time t ns
F
Body Diode Reverse Recovery Time 15.2 ns I = -5A, di/dt = -100A/s
t F
RR
Body Diode Reverse Recovery Charge 9.3 nC I = -5A, di/dt = -100A/s
Q F
RR
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMPH6050SSDQ September 2016
Diodes Incorporated
www.diodes.com
Document number: DS38774 Rev.1 - 2
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