IRFS5615PbF IRFSL5615PbF Features Key Parameters Key Parameters Optimized for Class-D Audio V 150 V DS Amplifier Applications m R typ. 10V 34.5 DS(ON) Low R for Improved Efficiency DSON Q typ. 26 nC g Low Q and Q for Better THD and Improved Q typ. G SW 11 nC sw R typ. Efficiency 2.7 G(int) T max 175 C Low Q for Better THD and Lower EMI J RR 175C Operating Junction Temperature for D D D Ruggedness Can Deliver up to 300W per Channel into 4 Load in Half-Bridge Configuration Amplifier S S G D G G 2 D Pak TO-262 S IRFS5615PbF IRFSL5615PbF GD S Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 150 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 33 D C GS I T = 100C Continuous Drain Current, V 10V 24 A D C GS Pulsed Drain Current I 140 DM Power Dissipation P T = 25C 144 D C W Power Dissipation P T = 100C 72 D C Linear Derating Factor 0.96 W/C T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.045 JC C/W Junction-to-Ambient (PCB Mount) R 40 JA Notes through are on page 2 www.irf.com 1 12/18/08 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.18 V/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 34.5 42 V = 10V, I = 21A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 100A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -13 mV/C GS(th) J I Drain-to-Source Leakage Current 20 V = 150V, V = 0V DSS DS GS A 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS g Forward Transconductance 35 S V = 50V, I = 21A fs DS D Q Total Gate Charge 26 40 g Q Pre-Vth Gate-to-Source Charge 6.4 V =75V gs1 DS Q Post-Vth Gate-to-Source Charge 2.2 V = 10V gs2 GS nC Q Gate-to-Drain Charge 9.0 I = 21A gd D Q Gate Charge Overdrive 8.9 See Fig. 6 and 19 godr Q Switch Charge (Q + Q ) 11 sw gs2 gd R Internal Gate Resistance 2.7 5.0 G(int) t Turn-On Delay Time 8.9 V = 75V, V = 10V d(on) DD GS t Rise Time 23.1 I = 21A r D ns t Turn-Off Delay Time 17.2 R = 2.4 d(off) G t Fall Time 13.1 f C Input Capacitance 1750 V = 0V iss GS C Output Capacitance 155 V = 50V oss DS pF C Reverse Transfer Capacitance 40 = 1.0MHz, See Fig.5 rss C Effective Output Capacitance 175 V = 0V, V = 0V to 120V oss GS DS L Internal Drain Inductance Between lead, D D 4.5 6mm (0.25in.) nH G L Internal Source Inductance from package S 7.5 S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 109 mJ AS Avalanche Current I See Fig. 14, 15, 17a, 17b A AR Repetitive Avalanche Energy E mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I T = 25C Continuous Source Current MOSFET symbol S C 33 (Body Diode) showing the A I Pulsed Source Current integral reverse SM 140 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 21A, V = 0V SD J S GS t Reverse Recovery Time 80 120 ns T = 25C, I = 21A, V =120V rr J F R Q di/dt = 100A/s Reverse Recovery Charge 312 468 nC rr Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive Repetitive rating pulse width limited by max. junction temperature. avalanche information Starting T = 25C, L = 0.51mH, R = 25, I = 21A. J G AS When mounted on 1 square PCB (FR-4 or G-10 Material). For Pulse width 400s duty cycle 2%. recommended footprint and soldering techniques refer to R is measured at T of approximately 90C. J application note AN-994. 2 www.irf.com