Green DMT10H015LK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production I D BV R Max DSS DS(ON) T = +25C Ensures More Reliable and Robust End Application C Low R Minimizes Power Losses DS(ON) 52.7A 15m VGS = 10V Low Q Minimizes Switching Losses G Lead-Free Finish RoHS Compliant (Notes 1 & 2) 100V 18m V = 6V 48A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 25m V = 4.5V 40A GS Mechanical Data Description Case: TO252 (DPAK) This new generation MOSFET features low on-resistance and fast Case Material: Molded Plastic, Green Molding Compound. switching, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.33 grams (Approximate) DC-DC Converters Backlighting Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMT10H015LK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT10H015LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 52.7 C A Continuous Drain Current, V = 10V I GS D 42.1 T = +70C C 210 A Pulsed Drain Current (10s Pulse, T = +25C, Package Limited) I C DM Maximum Continuous Body Diode Forward Current (Note 6) 48 A I S 210 A Pulsed Body Diode Forward Current (10s Pulse, T = +25C, Package Limited) I C SM Avalanche Current, L = 3mH I 7.5 A AS Avalanche Energy, L = 3mH E 85 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.8 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 69 C/W R JA Total Power Dissipation (Note 6) 2.9 W P D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 42 JA C/W Thermal Resistance, Junction to Case R 2 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.4 3.5 V V V = V , I = 250A GS(TH) DS GS D 10.7 15 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R 13.1 18 m V = 6V, I = 20A DS(ON) GS D 18.2 25 V = 4.5V, I = 5A GS D Diode Forward Voltage V 1.3 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1871 ISS V = 50V, V = 0V DS GS 261 Output Capacitance pF COSS f = 1MHz 6.9 Reverse Transfer Capacitance C RSS Gate Resistance 0.75 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 33.3 Q G V = 50V, I = 10A, DD D Gate-Source Charge 6.9 nC Q GS V = 10V GS Gate-Drain Charge 5.1 Q GD 6.5 Turn-On Delay Time t D(ON) 7.0 Turn-On Rise Time t R VDD = 50V, VGS = 10V, ns 19.7 Turn-Off Delay Time t I = 10A, R = 6 D(OFF) D G 8.1 Turn-Off Fall Time t F 37.9 Reverse Recovery Time t ns RR I = 10A, di/dt = 100A/s F 51.9 Reverse Recovery Charge nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H015LK3 July 2018 Diodes Incorporated www.diodes.com Document number: DS38736 Rev. 6 - 2