DMT10H010LK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable I Max D BV R Max DSS DS(ON) T = +25C C and Robust End Application Low R Minimizes Power Losses DS(ON) 8.8m V = 10V 68.8A GS Low Q Minimizes Switching Losses g Lead-Free Finish RoHS Compliant (Notes 1 & 2) 100V 60.7A 11.3m V = 6.0V GS Halogen and Antimony Free. Green Device (Note 3) 52.7A 15m V = 4.5V GS Mechanical Data Case: TO252 (DPAK) Description Case Material: Molded Plastic, Green Molding Compound. This new generation MOSFET features low on-resistance and fast UL Flammability Classification Rating 94V-0 switching, making it ideal for high-efficiency power management Moisture Sensitivity: Level 1 per J-STD-020 applications. Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Applications Weight: 0.33 grams (Approximate) Power Management Functions DC-DC Converters Backlighting Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMT10H010LK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT10H010LK3 Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage 20 V V GSS T = +25C 68.8 C Continuous Drain Current,V = 10V I A GS D 55 T = +70C C T = +25C C 60.7 A Continuous Drain Current,V = 6V I GS D T = +70C 48.5 C Pulsed Drain Current (10s Pulse, TC=+25C, Package Limited) 275 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 52 A I S Pulsed Body Diode Forward Current (10s Pulse, TC=+25C, Package Limited) 275 A I SM Avalanche Current, L=3mH 10 A I AS Avalanche Energy, L=3mH E 150 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 3 W P D Thermal Resistance, Junction to Ambient (Note 5) 42 C/W R JA Total Power Dissipation (Note 6) 62.5 W P D Thermal Resistance, Junction to Case (Note 6) R 2 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.2 2.8 V V V = V , I = 250A GS(TH) DS GS D 6.5 8.8 V = 10V, I = 13A GS D Static Drain-Source On-Resistance R 7.8 11.3 m V = 6V, I = 13A DS(ON) GS D 12.5 15 V = 4.5V, I = 13A GS D Diode Forward Voltage V 1.3 V V = 0V, I = 13A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2,592 Ciss V = 50V, V = 0V DS GS 792 Output Capacitance pF C oss f = 1MHz Reverse Transfer Capacitance 45 C rss Gate Resistance 2 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 53.7 Q g V = 50V, I = 13A, DD D Gate-Source Charge 10.6 nC Q gs V = 10V GS 8.2 Gate-Drain Charge Q gd 11.6 Turn-On Delay Time t D(ON) 14.1 Turn-On Rise Time t R V = 50V, V = 10V, DD GS ns 42.9 Turn-Off Delay Time t I =13A, R = 6 D(OFF) D g 22 Turn-Off Fall Time t F 49.8 Reverse Recovery Time ns t RR I =13A, di/dt=100A/s F Reverse Recovery Charge 85.1 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on infinite heat sink. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H010LK3 September 2018 Diodes Incorporated www.diodes.com Document number: DS39093 Rev. 6 - 2