DMP6023LFGQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I max D V R max (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C A density end products 25m V = -10V GS -7.7A -60V Occupies just 33% of the board area occupied by SO-8 enabling 33m V = -4.5V -6.8A GS smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: POWERDI 3333-8 automotive applications. It is qualified to AECQ101, supported by a Case Material: Molded Plastic,Gree Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) POWERDI 3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMP6023LFGQ-7 2,000/Tape & Reel POWERDI 3333-8 DMP6023LFGQ-13 3,000/Tape & Reel POWERDI 3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6023LFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -7.7 A I A D State -6.2 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C -10.3 A t<10s A I D -8.2 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -55 A DM Maximum Continuous Body Diode Forward Current (Note 6) I -2.2 A S Avalanche Current, L = 0.1mH I -35.5 A AS Avalanche Energy, L = 0.1mH E 62.9 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) 1.0 W P D Steady State 123 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 69 Total Power Dissipation (Note 7) 2.1 W P D Steady State 60 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 34 C/W Thermal Resistance, Junction to Case (Note 7) R 6.3 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(TH) DS GS D 25 V = -10V, I = -5A GS D Static Drain-Source On-Resistance m R DS(ON) 33 V = -4.5V, I = -4A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C pF iss 2569 V = -30V, V = 0V, DS GS Output Capacitance pF C 179 oss f = 1MHz Reverse Transfer Capacitance pF C 143 rss Gate Resistance 8 R V = 0V, V = 0V, f = 1MHz g DS GS 26.5 nC Total Gate Charge (V = -4.5V) Q GS g 53.1 nC Total Gate Charge (V = -10V) Q GS g V = -30V, I = -5A DS D 7.1 Gate-Source Charge Q nC gs 12.6 Gate-Drain Charge Q nC gd 6 Turn-On Delay Time t ns D(ON) 7.1 Turn-On Rise Time t ns R V = -10V, V = -30V, GS DS 110 Turn-Off Delay Time t ns R = 3, I = -5A D(OFF) G D Turn-Off Fall Time 62 ns t F Body Diode Reverse Recovery Time 20 ns t RR I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 14 nC Q RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMP6023LFGQ March 2016 Diodes Incorporated www.diodes.com Document number: DS38647 Rev. 1 - 2 ADVANCE INFORMATION