DMNH4005SPSQ
Green
40V N-CHANNEL 175C MOSFET
POWERDI
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I
D
BV R
DSS DS(ON)
Environments
T = +25C
C
100% Unclamped Inductive Switching Ensures More Reliable
40V 4.0m @ V = 10V 80A
GS
and Robust End Application
Low R Minimises Power Losses
DS(ON)
Low Q Minimises Switching Losses
Description and Applications g
<1.1mm Package Profile Ideal for Thin Applications
This MOSFET has been designed to meet the stringent requirements
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
of Automotive applications. It is qualified to AECQ101, supported by a
Halogen and Antimony Free. Green Device (Note 3)
PPAP and is ideal for use in:
Qualified to AEC-Q101 Standards for High Reliability
Engine Management Systems
PPAP Capable (Note 4)
Body Control Electronics
Mechanical Data
DC-DC Converters
Case: PowerDI5060-8
Case Material: Molded Plastic, Green Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D
PowerDI5060-8
S
D
S
D
Pin1
S D
G
G D
S Top View
Pin Configuration
Top View
Bottom View Internal Schematic
Ordering Information (Note 5)
Part Number Case Packaging
DMNH4005SPSQ-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH4005SPSQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 40 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 80
C
Continuous Drain Current (Note 7) V = 10V I A
GS D
State 60
T = +100C
C
90
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A
DM
Maximum Continuous Body Diode Forward Current (Note 6) 80 A
I
S
Avalanche Current (Note 8) L=1mH 30 A
I
AS
Avalanche Energy (Note 8) L=1mH 445 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 1.6 W
P
D
Steady State 98
Thermal Resistance, Junction to Ambient (Note 6) R C/W
JA
t<10s 54
Total Power Dissipation (Note 7) 2.8 W
P
D
Steady State 53
Thermal Resistance, Junction to Ambient (Note 7) R
JA
t<10s 29 C/W
Thermal Resistance, Junction to Case 0.9
R
JC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage 40 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 32V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 16V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage 1 3 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance 3.2 4.0
R m V = 10V, I = 20A
DS(ON) GS D
Diode Forward Voltage VSD 1.2 V V = 0V, I = 1A
GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance C 2847
iss
V = 20V, V = 0V
DS GS
743
Output Capacitance C pF
oss
f = 1.0MHz
243
Reverse Transfer Capacitance C
rss
2.0
Gate Resistance
Rg VDS = 0V, VGS = 0V, f = 1.0MHz
48
Total Gate Charge (V = 10V) Q
GS g
23
Total Gate Charge (V = 4.5V) Q
GS g
nC V = 20V, I = 20A
DD D
Gate-Source Charge 9.5
Q
gs
Gate-Drain Charge 11.5
Q
gd
Turn-On Delay Time 6.6
t
D(ON)
12.1
Turn-On Rise Time t V = 20V, V = 10V,
R DD GS
ns
18.3
Turn-Off Delay Time t R = 1, I = 20A
D(OFF) g D
4.9
Turn-Off Fall Time t
F
29
Reverse Recovery Time t ns
RR
I = 15A, di/dt = 100A/s
F
24
Reverse Recovery Charge Q nC
RR
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
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DMNH4005SPSQ September 2016
Diodes Incorporated
www.diodes.com
Document number: DS38860 Rev. 1 - 2