X-On Electronics has gained recognition as a prominent supplier of STH270N8F7-2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STH270N8F7-2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STH270N8F7-2 STMicroelectronics

STH270N8F7-2 electronic component of STMicroelectronics
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Part No.STH270N8F7-2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-CH 80V 17mOhm 180A STripFET VII
Datasheet: STH270N8F7-2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.6571 ea
Line Total: USD 7.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 4.252
2000 : USD 4.2319
3000 : USD 4.213
4000 : USD 4.1928
5000 : USD 4.1714
10000 : USD 4.1513
20000 : USD 4.1299
25000 : USD 4.1098
50000 : USD 4.0883

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 3.4207

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 7.6571
10 : USD 2.6006
100 : USD 2.0804
500 : USD 1.8493
1000 : USD 1.5603
5000 : USD 1.4254
10000 : USD 1.387

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 1.8138

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STH270N8F7-2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STH270N8F7-2 and other electronic components in the MOSFETs category and beyond.

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STH270N8F7-2, STH270N8F7-6, STP270N8F7 Datasheet N-channel 80 V, 0.0017 typ., 180 A STripFET F7 Power MOSFETs in an HPAK-2, HPAK-6 and TO-220 packages TAB Features TAB 7 V R max. I Order codes DS DS(on) D 2 3 1 1 2 2 H PAK-2 H PAK-6 STH270N8F7-2 0.0021 TAB STH270N8F7-6 80 V 180 A STP270N8F7 0.0025 3 2 1 Among the lowest R on the market DS(on) TO-220 Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss D(TAB) D(2, TAB) High avalanche ruggedness G(1) G(1) Applications Switching applications S(2, 3, 4, 5, 6, 7) S(3) Description 2 2 TO-220 H PAK-2, H PAK-6 These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. H2PAK 2 6 N-CHG1DTABS234567 TO-220 N-CHG1D2TABS3 Product status links STH270N8F7-2 STH270N8F7-6 STP270N8F7 DS9394 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 80 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 180 A C D (1) Drain current (continuous) at T = 100 C I 180 A D c (2) I Drain current (pulsed) 720 A DM (3) Total power dissipation at T = 25 C P 315 W TOT C (4) E Single pulse avalanche energy 1.16 J AS T Operating junction temperature range j -55 to 175 C T Storage temperature range stg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. This value is rated according to R thJC 4. Starting T =25 C, I =65 A, V =50 V j D DD Table 2. Thermal data Value Symbol Parameter Unit HPAK-2, HPAK-6 TO-220 Thermal resistance, R C/W thJC 0.48 junction-to-case Thermal resistance, (1) R 35 C/W thJB junction-to-board Thermal resistance, R 62.5 C/W thJA junction-to-ambient 1. When mounted on an 1 inch FR-4, 2 Oz copper board. DS9394 - Rev 5 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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