STH150N10F7-2 STMicroelectronics

STH150N10F7-2 N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 2 Power MOSFET in a H PAK-2 package Datasheet production data Features Order code V R I P DS DS(on)max D TOT STH150N10F7-2 100 V 0.0039 110 A 250 W TAB Among the lowest R on the market DS(on) Excellent figure of merit (FoM) 2 Low C /C ratio for EMI immunity rss iss 3 1 High avalanche ruggedness 2 H PAK-2 Applications Switching applications Description This N-channel Power MOSFET utilizes Figure 1. Internal schematic diagram STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal % 7 capacitance and gate charge for faster and more efficient switching. * 6 0 Y Table 1. Device summary Order code Marking Package Packaging 2 STH150N10F7-2 150N10F7 Tape and reel H PAK-2 September 2016 DocID025859 Rev 3 1/16 www.st.comContents STH150N10F7-2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 5 Packing information 13 6 Revision history . 15 2/16 DocID025859 Rev 3