STH240N75F3-2, STH240N75F3-6 N-channel 75 V, 2.6 m typ., 180 A STripFET III Power MOSFET in HPAK-2 and HPAK-6 packages Datasheet production data Features R DS(on) Order code V I TAB DSS D max. STH240N75F3-2 75 V < 3.0 m 180 A STH240N75F3-6 7 Conduction losses reduced 1 Low profile, very low parasitic inductance 2 H PAK-6 2 H PAK-2 Applications Switching application Description Figure 1. Internal schematic diagram These devices are N-channel enhancement mode Power MOSFETs produced using D(TAB) D(TAB) STMicroelectronics STripFET III technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. G(1) G(1) S(2, 3) S(2, 3, 4, 5, 6, 7) 2 2 H PAK-6 H PAK-2 AM14551V1 Table 1. Device summary Order code Marking Package Packaging 2 STH240N75F3-2 H PAK-2 240N75F3 Tape and reel 2 STH240N75F3-6 H PAK-6 July 2012 Doc ID 18486 Rev 2 1/18 This is information on a product in full production. www.st.com 18Contents STH240N75F3-2, STH240N75F3-6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 15 6 Revision history . 17 2/18 Doc ID 18486 Rev 2