Applications Brushed Motor drive applications HEXFET Power MOSFET BLDC Motor drive applications D PWM Inverterized topologies V 40V DSS Battery powered circuits R typ. 1.1m DS(on) Half-bridge and full-bridge topologies max. 1.4m Electronic ballast applications G I 295A D (Silicon Limited) Synchronous rectifier applications Resonant mode power supplies I 195A S D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Halogen Free GD S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube 50 IRFS7437-7PPbF IRFS7437-7PPbF D2Pak-7PIN Tape and Reel Left 800 IRFS7437TRL7PP 4.0 300 I = 100A Limited By Package D 250 3.0 200 150 T = 125C J 2.0 100 50 T = 25C J 1.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 295 D C GS 208 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A 195 I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) D C GS Pulsed Drain Current 1040 I DM Maximum Power Dissipation 231 P T = 25C W D C Linear Derating Factor 1.5 W/C Gate-to-Source Voltage V 20 V GS Peak Diode Recovery 3.5 dv/dt V/ns Operating Junction and -55 to + 175 T J Storage Temperature Range C T STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Single Pulse Avalanche Energy E 344 AS (Thermally limited) mJ Single Pulse Avalanche Energy 796 E AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.65 R JC C/W Junction-to-Ambient (PCB Mount) R 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250 A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 1.0mA (BR)DSS J D m R Static Drain-to-Source On-Resistance 1.1 1.4 V = 10V, I = 100A DS(on) GS D m 1.7 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.9 V V = V , I = 150 A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A = 40V, V = 0V V DSS DS GS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.2 G Calculated continuous current based on maximum allowable junction Pulse width 400 s duty cycle 2%. temperature. Bond wire current limit is 195A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitations arising from heating of the device leads may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom Limited by T , starting T = 25C, L = 0.069mH mended footprint and soldering techniques refer to application note AN-994. Jmax J R = 50, I = 100A, V =10V. GS G AS Limited by T , starting T = 25C, L = 0.069mH,R = 50, I 100A, di/dt 1288A/s, V V , T 175C. Jmax J G SD DD (BR)DSS J I = 40A, V =10V. AS GS