X-On Electronics has gained recognition as a prominent supplier of 743-9 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 743-9 MOSFETs are a product manufactured by TE Connectivity. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

743-9 TE Connectivity

743-9 electronic component of TE Connectivity
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Part No.743-9
Manufacturer: TE Connectivity
Category: MOSFETs
Description: MOSFET 150V 5.2A 5.4W 90mohm @ 10V
Datasheet: 743-9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 20.0309 ea
Line Total: USD 40.06 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2
Multiples : 1
2 : USD 20.0309

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the 743-9 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 743-9 and other electronic components in the MOSFETs category and beyond.

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Si7439DP Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.090 at V = - 10 V - 5.2 GS TrenchFET Power MOSFETs - 150 Ultra-Low On-Resistance Critical for Application 0.095 at V = - 6 V - 5.0 GS Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R and Avalanche Tested PowerPAK SO-8 g Compliant to RoHS Directive 2002/95/EC S APPLICATIONS 6.15 mm 5.15 mm 1 S Active Clamp in Intermediate DC/DC Power Supplies 2 S 3 G S 4 D 8 D 7 G D 6 D 5 Bottom View Ordering Information: Si7439DP-T1-E3 (Lead (Pb)-free) D Si7439DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 150 DS V Gate-Source Voltage V 20 GS T = 25 C - 5.2 - 3.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.1 - 2.4 A I Pulsed Drain Current - 50 A DM a I - 4.2 - 1.6 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I - 40 AS L = 0.1 mH E Single Pulse Avalanche Energy 80 mJ AS T = 25 C 5.4 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.4 1.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State 50 65 C/W Maximum Junction-to-Case (Drain) Steady State R 1.0 1.5 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73106 www.vishay.com S10-2246-Rev. E, 04-Oct-10 1Si7439DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = - 250 A - 2.0 - 4.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 70 C - 10 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 5.2 A 0.073 0.090 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 5.0 A 0.077 0.095 GS D a g V = - 15 V, I = - 5.2 A 19 S Forward Transconductance fs DS D a V I = - 4.2 A, V = 0 V - 0.78 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 88 135 g Q V = - 75 V, V = - 10 V, I = - 5.2 A Gate-Source Charge 17.5 nC gs DS GS D Q Gate-Drain Charge 26.5 gd R Gate Resistance 1.5 3 4.5 g t Turn-On Delay Time 25 40 d(on) Rise Time t 46 70 V = - 75 V, R = 15.5 r DD L I - 4.8 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN G 115 180 ns d(off) t Fall Time 64 100 f t I = - 2.9 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 100 150 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 50 40 V = 10 V thru 5 V 35 GS 40 30 25 30 20 20 15 T = 125 C C 10 10 25 C 5 4 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 2468 10 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73106 2 S10-2246-Rev. E, 04-Oct-10 I - Drain Current (A) D I - Drain Current (A) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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