Si7439DP Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.090 at V = - 10 V - 5.2 GS TrenchFET Power MOSFETs - 150 Ultra-Low On-Resistance Critical for Application 0.095 at V = - 6 V - 5.0 GS Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R and Avalanche Tested PowerPAK SO-8 g Compliant to RoHS Directive 2002/95/EC S APPLICATIONS 6.15 mm 5.15 mm 1 S Active Clamp in Intermediate DC/DC Power Supplies 2 S 3 G S 4 D 8 D 7 G D 6 D 5 Bottom View Ordering Information: Si7439DP-T1-E3 (Lead (Pb)-free) D Si7439DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 150 DS V Gate-Source Voltage V 20 GS T = 25 C - 5.2 - 3.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.1 - 2.4 A I Pulsed Drain Current - 50 A DM a I - 4.2 - 1.6 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I - 40 AS L = 0.1 mH E Single Pulse Avalanche Energy 80 mJ AS T = 25 C 5.4 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.4 1.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State 50 65 C/W Maximum Junction-to-Case (Drain) Steady State R 1.0 1.5 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73106 www.vishay.com S10-2246-Rev. E, 04-Oct-10 1Si7439DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = - 250 A - 2.0 - 4.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 70 C - 10 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 5.2 A 0.073 0.090 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 5.0 A 0.077 0.095 GS D a g V = - 15 V, I = - 5.2 A 19 S Forward Transconductance fs DS D a V I = - 4.2 A, V = 0 V - 0.78 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 88 135 g Q V = - 75 V, V = - 10 V, I = - 5.2 A Gate-Source Charge 17.5 nC gs DS GS D Q Gate-Drain Charge 26.5 gd R Gate Resistance 1.5 3 4.5 g t Turn-On Delay Time 25 40 d(on) Rise Time t 46 70 V = - 75 V, R = 15.5 r DD L I - 4.8 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN G 115 180 ns d(off) t Fall Time 64 100 f t I = - 2.9 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 100 150 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 50 40 V = 10 V thru 5 V 35 GS 40 30 25 30 20 20 15 T = 125 C C 10 10 25 C 5 4 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 2468 10 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73106 2 S10-2246-Rev. E, 04-Oct-10 I - Drain Current (A) D I - Drain Current (A) D