X-On Electronics has gained recognition as a prominent supplier of CPH3314-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPH3314-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPH3314-TL-H ON Semiconductor

CPH3314-TL-H electronic component of ON Semiconductor
CPH3314-TL-H ON Semiconductor
CPH3314-TL-H MOSFETs
CPH3314-TL-H  Semiconductors

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See Product Specifications
Part No. CPH3314-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ULTRAHIGH-SPEED SWITCHING APPLICATIONS
Datasheet: CPH3314-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1421 ea
Line Total: USD 426.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1421
3001 : USD 0.1193
6001 : USD 0.1123
42001 : USD 0.1083

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1421
3001 : USD 0.1193
6001 : USD 0.1123
42001 : USD 0.1083

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH3314-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH3314-TL-H and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENN6909 CPH3314 P-Channel Silicon MOSFET CPH3314 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive. CPH3314 2.9 0.15 0.4 3 0.05 1 2 1.9 1 : Gate 2 : Source 3 : Drain Specifications SANYO : CPH3 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --30 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --1.6 A D Drain Current (Pulse) I PW 10s, duty cycle 1% --6.4 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (900mm 0.8mm) 1 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0 --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0 --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--0.8A 1.0 1.5 S DS D R (on)1 I =--0.8A, V =--10V 210 270 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--0.4A, V =--4V 360 500 m DS D GS Input Capacitance Ciss V =--10V, f=1MHz 185 pF DS Output Capacitance Coss V =--10V, f=1MHz 30 pF DS Reverse Transfer Capacitance Crss V =--10V, f=1MHz 20 pF DS Marking : JP Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 CPH3314/D 0.7 0.2 0.6 1.6 0.6 0.9 2.8 0.2CPH3314 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time t (on) See specified Test Circuit 7 ns d Rise Time t See specified Test Circuit 4 ns r Turn-OFF Delay Time t (off) See specified Test Circuit 22 ns d Fall Time t See specified Test Circuit 8 ns f Total Gate Charge Qg V =--10V, V =--10V, I =--1.6A 4.7 nC DS GS D Gate-to-Source Charge Qgs V =--10V, V =--10V, I =--1.6A 0.8 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--10V, V =--10V, I =--1.6A 0.7 nC DS GS D Diode Forward Voltage V I =--1.6A, V =0 --0.9 --1.5 V SD S GS Switching Time Test Circuit V = --15V DD V IN 0V I = --0.8A D --10V R =18.7 L V IN D V OUT PW=10s D.C.1% G CPH3314 P.G 50 S I -- V I -- V D DS D GS --2.0 --2.0 V = --10V DS --1.8 --1.8 --1.6 --1.6 --1.4 --1.4 --1.2 --1.2 --1.0 --1.0 --0.8 --0.8 --0.6 --0.6 --0.4 --0.4 --0.2 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, V -- V IT02665 Gate-to-Source Voltage, V -- V IT02666 DS GS R (on) -- V R (on) -- Ta DS GS DS 800 600 Ta=25C 700 500 600 400 500 --0.8A I = --0.4A D 400 300 300 200 200 100 100 0 0 0--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, V -- V IT02667 Ambient Temperature, Ta -- C IT02668 GS Rev.0 I Page 2 of 4 I www.onsemi.com V = --3V GS I = --0.8A, V = --10V D GS I = --0.4A, V = --4V D GS --4V --5V --8V --6V 25C --10V Ta=75C --25C Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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