CPH3348 Power MOSFET 12V, 70m , 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge www.onsemi.com driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 1.8V drive 70m 4.5V Pb-Free and RoHS compliance 12V 115m 2.5V 3A Halogen Free compliance : CPH3348-TL-W 215m 1.8V Typical Applications Load Switch ELECTRICAL CONNECTION DC/DC Converter P-Channel SPECIFICATIONS 3 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit Drain to Source Voltage V 12 V DSS Gate to Source Voltage V 10 V GSS 1 Drain Current (DC) I 3A D 1:Gate 2 : Source Drain Current (Pulse) 3:Drain I 12 A DP PW 10 s, duty cycle 1% 2 Power Dissipation When mounted on ceramic substrate P 1.0 W D 2 (1200mm 0.8mm) PACKING TYPE : TL MARKING Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TL 2 : This product is designed to ESD immunity<200V*, so please take care when handling. *Machine Model ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (1200mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : July 2015 - Rev. 2 CPH3348/D WE LOT No.CPH3348 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V =0V 12 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 12V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V = 8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V = 6V, I = 1mA 0.4 1.4 V GS DS D Forward Transconductance g V = 6V, I = 1.5A 4.3 S FS DS D R (on)1 I = 1.5A, V = 4.5V 54 70m DS D GS Static Drain to Source On-State 80 115 R (on)2 I = 0.8A, V = 2.5V m DS D GS Resistance R (on)3 I = 0.3A, V = 1.8V 125 215 m DS D GS Input Capacitance Ciss 405 pF Output Capacitance Coss 145 pF V = 6V, f=1MHz DS Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time t (on) 8.8 ns d Rise Time t 80 ns r See specified Test Circuit Turn-OFF Delay Time 41 ns t (off) d Fall Time 50 ns t f Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs 0.7 nC V = 6V, V = 4.5V, I = 3A DS GS D Gate to Drain Miller Charge Qgd 1.6 nC Forward Diode Voltage V SD I = 3A, V=0V 0.85 1.2 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --6V DD IN 0V - -4.5V I =--1.5A D V IN R =4 L D V OUT PW=10s D.C. 1% G CPH3348 P.G 50 S www.onsemi.com 2