X-On Electronics has gained recognition as a prominent supplier of CPH3348-TL-W MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPH3348-TL-W MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPH3348-TL-W ON Semiconductor

CPH3348-TL-W electronic component of ON Semiconductor
CPH3348-TL-W ON Semiconductor
CPH3348-TL-W MOSFETs
CPH3348-TL-W  Semiconductors

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See Product Specifications
Part No. CPH3348-TL-W
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PCH 1.8V Power MOSFE
Datasheet: CPH3348-TL-W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
952: USD 0.0683 ea
Line Total: USD 65.02 
Availability - 0
MOQ: 952  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 952
Multiples : 1
952 : USD 0.0683

0
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1783
6000 : USD 0.1719

0
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 1
Multiples : 1
1 : USD 0.6231
10 : USD 0.5075
100 : USD 0.3458
500 : USD 0.2593
1000 : USD 0.1945

0
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 1.3788
10 : USD 0.6177
100 : USD 0.3068
500 : USD 0.2296
1000 : USD 0.1724
3000 : USD 0.1474
9000 : USD 0.1383
24000 : USD 0.1344

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH3348-TL-W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH3348-TL-W and other electronic components in the MOSFETs category and beyond.

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CPH3348 Power MOSFET 12V, 70m , 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge www.onsemi.com driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 1.8V drive 70m 4.5V Pb-Free and RoHS compliance 12V 115m 2.5V 3A Halogen Free compliance : CPH3348-TL-W 215m 1.8V Typical Applications Load Switch ELECTRICAL CONNECTION DC/DC Converter P-Channel SPECIFICATIONS 3 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit Drain to Source Voltage V 12 V DSS Gate to Source Voltage V 10 V GSS 1 Drain Current (DC) I 3A D 1:Gate 2 : Source Drain Current (Pulse) 3:Drain I 12 A DP PW 10 s, duty cycle 1% 2 Power Dissipation When mounted on ceramic substrate P 1.0 W D 2 (1200mm 0.8mm) PACKING TYPE : TL MARKING Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TL 2 : This product is designed to ESD immunity<200V*, so please take care when handling. *Machine Model ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (1200mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : July 2015 - Rev. 2 CPH3348/D WE LOT No.CPH3348 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V =0V 12 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 12V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V = 8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V = 6V, I = 1mA 0.4 1.4 V GS DS D Forward Transconductance g V = 6V, I = 1.5A 4.3 S FS DS D R (on)1 I = 1.5A, V = 4.5V 54 70m DS D GS Static Drain to Source On-State 80 115 R (on)2 I = 0.8A, V = 2.5V m DS D GS Resistance R (on)3 I = 0.3A, V = 1.8V 125 215 m DS D GS Input Capacitance Ciss 405 pF Output Capacitance Coss 145 pF V = 6V, f=1MHz DS Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time t (on) 8.8 ns d Rise Time t 80 ns r See specified Test Circuit Turn-OFF Delay Time 41 ns t (off) d Fall Time 50 ns t f Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs 0.7 nC V = 6V, V = 4.5V, I = 3A DS GS D Gate to Drain Miller Charge Qgd 1.6 nC Forward Diode Voltage V SD I = 3A, V=0V 0.85 1.2 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --6V DD IN 0V - -4.5V I =--1.5A D V IN R =4 L D V OUT PW=10s D.C. 1% G CPH3348 P.G 50 S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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