CPH3350-TL-H ON Semiconductor

Ordering number : ENA0151B CPH3350 P-Channel Power MOSFET CPH3350 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--1.5A 4.3 S DS D R (on)1 I =--1.5A, V =--4.5V 64 83 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1A, V =--2.5V 89 124 m DS D GS R (on)3 I =--0.2A, V =--1.8V 131 196 m DS D GS Input Capacitance Ciss 375 pF Output Capacitance Coss V =--10V, f=1MHz 77 pF DS Reverse Transfer Capacitance Crss 58 pF Turn-ON Delay Time t (on) 8.1 ns d Rise Time t 26 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 42 ns d Fall Time t 37 ns f Total Gate Charge Qg 4.6 nC Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--3A 0.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 1.3 nC Diode Forward Voltage V I =--3A, V =0V --0.83 --1.2 V SD S GS Switching Time Test Circuit V V = --10V IN DD 0V --4.5V I = --1.5A D V IN R =6.67 L D V OUT PW=10s D.C.1% G CPH3350 P.G 50 S Ordering Information Device Package Shipping memo CPH3350-TL-H CPH3 3,000pcs./reel Pb Free and Halogen Free CPH3350-TL-W No. A0151-2/6