MCH6431-TL-H ON Semiconductor

LOTNo. LOTNo. MCH6431 Power MOSFET www.onsemi.com 30V, 55m , 5A, Single N-Channel Features V R (on) Max I DSS DS D Max Low On-Resistance 55m 10V 4V Drive 30V 91m 4.5V 5A ESD Diode-Protected Gate 109m 4V Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25C 1,2,5,6 Parameter Symbol Value Unit Drain to Source Voltage V 30V DSS Gate to Source Voltage V 20 V GSS Drain Current (DC) I 5A D 1:Drain 3 2:Drain Drain Current (Pulse) 3:Gate A I 20 DP PW10s, duty cycle1% 4:Source 5:Drain Power Dissipation 6:Drain 4 When mounted on ceramic substrate P 1.5W D 2 (1200mm 0.8mm) C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 Packing Type : TL Marking Thermal Resistance Ratings ZF Parameter Symbol Value Unit Junction to Ambient TL When mounted on ceramic substrate R 83.3 C/W JA 2 (1200mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 3 MCH6431/D MCH6431 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=2.5A 2.2 S FS DS D R(on)1 I =2.5A, V=10V 42 55m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1.2A, V=4.5V 65 91m DS D GS R(on)3 I =1.2A, V=4V 78 109m DS D GS Input Capacitance Ciss 280 pF Output Capacitance Coss V =10V, f=1MHz 60 pF DS Reverse Transfer Capacitance Crss 30 pF Turn-ON Delay Time t (on) 5.7 ns d Rise Time t 11 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 21 ns d Fall Time t 10 ns f Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs V =15V, V =10V, I =5A 1.2 nC DS GS D Gate to Drain Miller Charge Qgd 0.8 nC Forward Diode Voltage V I =5A, V=0V 0.85 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =15V DD V IN 10V I =2A D 0V R =7.5 L V V D IN OUT PW=10s D.C.1% G P.G 50 MCH6431 S www.onsemi.com 2