LOT No. LOT No. Ordering number : ENA1566B MCH6445 N-Channel Power MOSFET MCH6445 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 mA DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 mA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =2A 3 S DS D R (on)1 I =2A, V =10V 60 78 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1A, V =4.5V 74 104 m DS D GS R (on)3 I =1A, V =4V 81 114 m DS D GS Input Capacitance Ciss 505 pF Output Capacitance Coss V =20V, f=1MHz 57 pF DS Reverse Transfer Capacitance Crss 37 pF Turn-ON Delay Time t (on) 7.3 ns d Rise Time t 9.8 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 40 ns d Fall Time t 24 ns f Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =4A 1.6 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.1 nC Diode Forward Voltage V I =4A, V =0V 0.82 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =30V DD V IN 10V I =2A D 0V R =15 L V V IN D OUT PW=10ms D.C.1% G P.G 50 MCH6445 S Ordering Information Device Package Shipping memo MCH6445-TL-E Pb-Free MCPH6 3,000pcs./reel MCH6445-TL-W Pb-Free and Halogen Free No. A1566-2/5