X-On Electronics has gained recognition as a prominent supplier of TK100A08N1,S4X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK100A08N1,S4X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK100A08N1,S4X Toshiba

TK100A08N1,S4X electronic component of Toshiba
TK100A08N1,S4X Toshiba
TK100A08N1,S4X MOSFETs
TK100A08N1,S4X  Semiconductors

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See Product Specifications
Part No. TK100A08N1,S4X
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
Datasheet: TK100A08N1,S4X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.0612 ea
Line Total: USD 5.06 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 4.575
10 : USD 3.9483
100 : USD 3.235
500 : USD 2.7538
1000 : USD 2.3225
2000 : USD 2.2064
5000 : USD 2.1235

0
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 5.0612
50 : USD 3.158
100 : USD 2.6666
250 : USD 2.6248
500 : USD 2.2901
1000 : USD 2.1332

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK100A08N1,S4X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK100A08N1,S4X and other electronic components in the MOSFETs category and beyond.

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TK100A08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A08N1TK100A08N1TK100A08N1TK100A08N1 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 2.6 m (typ.) (V = 10 V) DS(ON) GS (2) Low leakage current: I = 10 A (max) (V = 80 V) DSS DS (3) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 80 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1,2) I 214 A D Drain current (DC) (T = 25) (Note 1) I 100 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 568 DP Power dissipation (T = 25) P 45 W c D Single-pulse avalanche energy (Note 3) E 278 mJ AS Avalanche current I 100 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2011-12 2014-01-28 1 Rev.3.0TK100A08N1 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.77 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 100 A. Note 3: V = 64 V, T = 25 (initial), L = 21.4 H, I = 100 A DD ch AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-28 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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