X-On Electronics has gained recognition as a prominent supplier of TK100E08N1,S1X(S MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK100E08N1,S1X(S MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK100E08N1,S1X(S Toshiba

Name: TK100E08N1,S1X(S
Brand: Toshiba
SKU: TK100E08N1S1XS_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

TK100E08N1,S1X(S electronic component of Toshiba

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See Product Specifications

Part No.	TK100E08N1,S1X(S
Manufacturer:	Toshiba
Category:	MOSFETs
Description:	MOSFET N Trench 80V 100A 4V @ 1mA 3.2 mÎ© @ 50A,10V TO-220 RoHS
Datasheet:	TK100E08N1,S1X(S Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.0285 ea
Line Total: USD 2.03

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

TK100E08N1,S1X(S More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 1 Multiples : 1	1 : USD 2.0285 10 : USD 1.9827 30 : USD 1.9502 100 : USD 1.9197

Specifications

Manufacturer Toshiba Toshiba
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 220 TO - 220
Brand Category Toshiba Toshiba
Fet Type n trench n trench
Drain To Source Voltagevdss 80 V 80 V
Continuous Drain Current Id @ 25°C 100 A 100 A
Vgsth Max @ Id 4v @ 1m A 4v @ 1m A
Rds On Max @ Id Vgs 3.2 m @ 50a,10v 3.2 m @ 50a,10v
Power Dissipation Max 255 W 255 W
Drain Source Voltage Vdss 80 V 80 V
Continuous Drain Current Id 100 A 100 A
Power Dissipation Pd 255 W 255 W
Drain Source On Resistance Rdson@Vgs Id 3.2 mOhms @10V , 50A 3.2 mOhms @10V , 50A
Gate Threshold Voltage Vgsth@Id 4 V @1 mA 4 V @1 mA
Type N Channel N Channel

We are delighted to provide the TK100E08N1,S1X(S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK100E08N1,S1X(S and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Toshiba TK100E08N1,S1X(S is an N-channel, transformer-coupled power MOSFET (metal-oxide-semiconductor field-effect transistor) with an 80V drain-source voltage (VDS which is also referred to as the breakdown voltage), and a 100A drain current (ID). It has a low on-resistance of 3.2mÎ© @ 50A, a gate-source threshold voltage of 4V @ 1mA, and a gate-source voltage of 10V. It is packaged in a TO-220 RoHS-compatible (Restriction of Hazardous Substances) case.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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