X-On Electronics has gained recognition as a prominent supplier of TPCC8093,L1Q(M MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPCC8093,L1Q(M MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPCC8093,L1Q(M Toshiba

Name: TPCC8093,L1Q(M
Brand: Toshiba
SKU: TPCC8093L1QM_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

TPCC8093,L1Q(M electronic component of Toshiba

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See Product Specifications

Part No.	TPCC8093,L1Q(M
Manufacturer:	Toshiba
Category:	MOSFETs
Description:	MOSFET N Trench 20V 21A 1.2V @ 500uA 5.8 mÎ© @ 10.5A,4.5V TSON-8 RoHS
Datasheet:	TPCC8093,L1Q(M Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.2724 ea
Line Total: USD 0.27

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

TPCC8093,L1Q(M More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 1 Multiples : 1	1 : USD 0.2724 10 : USD 0.2218 30 : USD 0.2002 100 : USD 0.1731 500 : USD 0.161 1000 : USD 0.1502 2000 : USD 0.1484 5000 : USD 0.1471

Specifications

Manufacturer Toshiba Toshiba
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TSON - 8 TSON - 8
Brand Category Toshiba Toshiba
Fet Type n trench n trench
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 21 A 21 A
Vgsth Max @ Id 1.2 V @ 500ua 1.2 V @ 500ua
Rds On Max @ Id Vgs 5.8 m @ 10.5a,4.5v 5.8 m @ 10.5a,4.5v
Power Dissipation-Max Ta 30 W 30 W
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 21 A 21 A
Power Dissipation Pd 30 W 30 W
Drain Source On Resistance Rdson@Vgs Id 5.8 mOhms @4.5V , 10.5A 5.8 mOhms @4.5V , 10.5A
Gate Threshold Voltage Vgsth@Id 1.2 V @500uA 1.2 V @500uA
Type N Channel N Channel

We are delighted to provide the TPCC8093,L1Q(M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPCC8093,L1Q(M and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The TPCC8093,L1Q(M with MOSFET N Trench 20V 21A 1.2V @ 500uA 5.8 mO @ 10.5A,4.5V TSON-8 RoHS is a low-loss, high-efficiency N-channel power MOSFET developed by Toshiba for use in various applications such as motor control, power supplies, and audio/power amplifiers. Its advanced trench gate structure allows it to operate at a relatively elevated temperature of up to 150°C, while still providing high efficiency. Its low on-resistance ensures minimal switching loss and excellent thermal dissipation. It features a drain-source voltage rating of 20V, a drain current capability of 21A, a gate threshold voltage of 1.2V @ 500uA, an on-resistance of 5.8 mO @ 10.5A, and a gate-source breakdown voltage rating of 4.5V. This part is compliant with RoHS (Restriction of Hazardous Substances) regulations.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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