TPCP8003-H(TE85L,F Toshiba

TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DCDC Converter Applications Unit: mm Notebook PC Applications 0.330.05 0.05 M A 8 5 Portable Equipment Applications Small footprint due to a small and thin package 0.475 1 4 High speed switching B M B 0.05 0.65 Small gate charge: Q = 7.5 nC (typ.) SW 2.90.1 A Low drain-source ON-resistance: R = 130 m (typ.) DS (ON) 0.80.05 High forward transfer admittance: Y = 5.4 S (typ.) fs 0.025 S S +0.1 0.28 0.170.02 -0.11 Low leakage current: I = 10 A (max) (V = 100V) DSS DS Enhancement mode: V = 1.1 to 2.3 V (V = 10 V, I = 1mA) th DS D +0.13 1.12 -0.12 +0.13 1.12 -0.12 Absolute Maximum Ratings (Ta = 25C) +0.1 0.28 1Source 5Drain -0.11 2Source 6Drain Characteristic Symbol Rating Unit 3Source 7Drain Drain-source voltage V 100 V 4Gate 8Drain DSS Drain-gate voltage (R = 20 k) V 100 V DGR JEDEC GS Gate-source voltage V 20 V GSS JEITA DC (Note 1) I 2.2 D TOSHIBA 2-3V1K Drain current A Pulsed (Note 1) I 8.8 DP Weight: 0.017 g (typ.) Drain power dissipation (t = 5 s) P 1.68 W D (Note 2a) Circuit Configuration Drain power dissipation (t = 5 s) 8 7 6 5 P 0.84 W D (Note 2b) Single-pulse avalanche energy E 3.93 mJ AS (Note 3) Avalanche current I 2.2 A AR Repetitive avalanche energy E 0.016 mJ AR (Tc=25) (Note 4) Channel temperature T 150 C ch 1 2 3 4 Storage temperature range T 55 to 150 C stg 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) 8003H are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2 3 4 This transistor is an electrostatic-sensitive device. Handle with care. Lot No. 1 2007-06-22 2.40.1 2.80.1TPCP8003-H Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 74.4 C/W th (ch-a) (t = 5 s) (Note 2a) Thermal resistance, channel to ambient R 148.8 C/W th (ch-a) (t = 5 s) (Note 2b) Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 1 mH, R = 1 , I = 2.2A DD ch G AR Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-06-22