MCH6603-TL-H ON Semiconductor

LOT No. LOT No. Ordering number : EN6446D MCH6603 P-Channel Power MOSFET MCH6603 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =--1mA, V =0V --50 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--50V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--100A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--40mA 70 110 mS DS D R (on)1 I =--40mA, V =--4V 18 23 DS D GS Static Drain to Source On-State Resistance R (on)2 I =--20mA, V =--2.5V 20 28 DS D GS R (on)3 I =--5mA, V =--1.5V 30 60 DS D GS Input Capacitance Ciss 7.4 pF Output Capacitance Coss V =--10V, f=1MHz 4.2 pF DS Reverse Transfer Capacitance Crss 1.3 pF Turn-ON Delay Time t (on) 20 ns d Rise Time t 35 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 160 ns d Fall Time t 150 ns f Total Gate Charge Qg 1.40 nC Gate to Source Charge Qgs V =--10V, V =--10V, I =--70mA 0.16 nC DS GS D Gate to Drain Miller Charge Qgd 0.23 nC Diode Forward Voltage V I =--70mA, V =0V --0.85 --1.2 V SD S GS Switching Time Test Circuit V = --25V DD V I = --40mA IN D 0V R =625 L --4V D V OUT V IN PW=10 s D.C.1% G P.G 50 S MCH6603 Ordering Information Device Package Shipping memo MCH6603-TL-H MCPH6 3,000pcs./reel Pb-Free and Halogen Free No.6446-2/6