FQT1N80TF WS N-Channel MOSFET March 2013 FQT1N80TF WS N-Channel QFET MOSFET 800V, 0.2 A, 20 Description Features This N-Channel enhancement mode power MOSFET is 0.2 A, 800 V, R = 15.5 (7 S.) V =10 V, I =0.1 A D DS(on) GS produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 5.5 nC) planar stripe and DMOS technology. This advanced Low C (Typ. 2.7 pF) rss MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy RoHS Compliant strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D S G G SOT-223 S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FQT1N80TF WS Unit V Drain to Source Voltage 800 V DSS V Gate to Source Voltage 30 V GSS o -Continuous (T = 25 C) 0.2 C I Drain Current A D o -Continuous (T = 100 C) 0.12 C I Drain Current - Pulsed (Note 1) 0.8 A DM E Single Pulsed Avalanche Energy (Note 2) 90 mJ AS I Avalanche Current (Note 1) 0.2 A AR E Repetitive Avalanche Energy (Note 1) 0.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns o (T = 25 C) 2.1 W C P Power Dissipation D o o - Derate above 25 C 0.02 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit o R Thermal Resistance, Junction to Ambient* - 60 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQT1N80TF WS Rev. C1FQT1N80TF WS N-Channel MOSFET o Package Marking and Ordering Information T = 25 C unless otherwise noted C Device Marking Device Package Reel Size Tape Width Quantity FQT1N80 FQT1N80TF WS SOT-223 330mm 12mm 4000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics o BV Drain to Source Breakdown Voltage I = 250A, V = 0V, T = 25 C 800 - - V DSS D GS J BV Breakdown Voltage Temperature DSS o o I = 250A, Referenced to 25 C - 0.8 - V/ C D / T Coefficient J V = 800V, V = 0V - - 25 DS GS I Zero Gate Voltage Drain Current A DSS o V = 640V, T = 125 C - - 250 DS C I Gate to Body Leakage Current V = 30V, V = 0V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250A 3.0 - 5.0 V GS(th) GS DS D R Static Drain to Source On Resistance V = 10V, I = 0.1A - 15.5 20 DS(on) GS D g Forward Transconductance V = 40V, I = 0.1A (Note 4) - 0.75 - S FS DS D Dynamic Characteristics C Input Capacitance - 150 195 pF iss V = 25V, V = 0V DS GS C Output Capacitance - 20 30 pF oss f = 1MHz C Reverse Transfer Capacitance - 2.7 5.0 pF rss Q Total Gate Charge at 10V - 5.5 7.2 nC g V = 640V, I = 1A Q Gate to Source Gate Charge DS D - 1.1 - nC gs V = 10V GS Q Gate to Drain Miller Charge - 3.3 - nC (Note 4, 5) gd Switching Characteristics t Turn-On Delay Time - 10 30 ns d(on) V = 400V, I = 1A t Turn-On Rise Time - 25 60 ns DD D r R = 25 G t Turn-Off Delay Time - 15 40 ns d(off) t Turn-Off Fall Time - 25 60 ns (Note 4, 5) f Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A SM V Drain to Source Diode Forward Voltage V = 0V, I = 0.2A - - 1.4 V SD GS SD t Reverse Recovery Time - 300 - ns V = 0V, I = 1A rr GS SD dI /dt = 100A/s (Note 4) Q Reverse Recovery Charge - 0.6 - C F rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 170mH, I = 1A, V = 50V, R = 25, Starting T = 25C AS DD G J 3. I 1A, di/dt 200A/s, V BV , Starting T = 25C SD DD DSS J 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics www.fairchildsemi.com 2011 Fairchild Semiconductor Corporation 2 FQT1N80TF WS Rev. C1