X-On Electronics has gained recognition as a prominent supplier of FQU2N100TU MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQU2N100TU MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQU2N100TU ON Semiconductor

FQU2N100TU electronic component of ON Semiconductor
FQU2N100TU ON Semiconductor
FQU2N100TU MOSFETs
FQU2N100TU  Semiconductors

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See Product Specifications
Part No. FQU2N100TU
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 1000 V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
Datasheet: FQU2N100TU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.83
10 : USD 1.5698
100 : USD 1.2232
500 : USD 1.0105
1000 : USD 0.7977
2000 : USD 0.7446
5000 : USD 0.7073
10000 : USD 0.6807
N/A

Obsolete
0
MOQ : 5040
Multiples : 5040
5040 : USD 0.4302
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.8928
10 : USD 1.3889
100 : USD 1.0522
500 : USD 0.8638
1000 : USD 0.7102
2500 : USD 0.6623
5040 : USD 0.6339
10080 : USD 0.6112
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5359
5 : USD 1.277
17 : USD 0.9197
46 : USD 0.8671
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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We are delighted to provide the FQU2N100TU from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQU2N100TU and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FQD2N100 / FQU2N100 N-Channel QFET MOSFET FQD2N100 / FQU2N100 N-Channel QFET MOSFET 1000 V, 1.6 A, 9 Features Description 1.6 A, 1000 V, R = 9 (Max.) V = 10 V, DS(on) GS This N-Channel enhancement mode power MOSFET is I = 0.8 A D produced using ON Semiconductors proprietary Low Gate Charge ( Typ. 12 nC) planar stripe and DMOS technology. This advanced Low Crss ( Typ. 5 pF) MOSFET technology has been especially tailored to 100% Avalanche Tested reduce on-state resistance, and to provide superior RoHS Compliant switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G I-PAK S D-PAK G G D S S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQD2N100TM / FQU2N100TU Unit V Drain-Source Voltage 1000 V DSS I Drain Current - Continuous (T = 25C) 1.6 A D C - Continuous (T = 100C) 1.0 A C I Drain Current - Pulsed (Note 1) 6.4 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 160 mJ AS I (Note 1) Avalanche Current 1.6 A AR E Repetitive Avalanche Energy (Note 1) 5.0 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 5.5 V/ns Power Dissipation (T = 25C) * P 2.5 W A D Power Dissipation (T = 25C) 50 W C - Derate above 25C 0.4 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQD2N100TM Symbol Parameter Unit FQU2N100TU R Thermal Resistance, Junction to Case, Max . 2.5 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. 50 2004 Semiconductor Components Industries, LLC. Publication Order Number: October-2017,Rev. 3 FQU2N100/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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