X-On Electronics has gained recognition as a prominent supplier of FQU5N60CTU MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQU5N60CTU MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQU5N60CTU ON Semiconductor

FQU5N60CTU electronic component of ON Semiconductor
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See Product Specifications
Part No.FQU5N60CTU
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET N-CH600V5AQFET
Datasheet: FQU5N60CTU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.023 ea
Line Total: USD 1.02 
Availability - 201
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8851
10 : USD 0.7544
30 : USD 0.682
70 : USD 0.601
490 : USD 0.5057
980 : USD 0.4902

201
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.023
10 : USD 0.6391
100 : USD 0.5808
500 : USD 0.5236
1000 : USD 0.4554
5040 : USD 0.4433
10080 : USD 0.4367

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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We are delighted to provide the FQU5N60CTU from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQU5N60CTU and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FQD5N60C / FQU5N60C N-Channel QFET MOSFET FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Features Description 2.8 A, 600 V, R = 2.5 (Max.) V = 10 V, I = 1.4 A This N-Channel enhancement mode power MOSFET is DS(on) GS D produced using ON Semiconductors proprietary planar Low Gate Charge ( Typ. 15 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF) technology has been especially tailored to reduce on-state 100% Avalanche Tested resistance, and to provide superior switching performance RoHS compliant and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S I-PAK D-PAK G G D S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD5N60CTM / FQU5N60CTU Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25C) 2.8 A D C - Continuous (T = 100C) 1.8 A C I Drain Current - Pulsed (Note 1) 11.2 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 210 mJ AS I (Note 1) Avalanche Current 2.8 A AR E Repetitive Avalanche Energy (Note 1) 4.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25C)* 2.5 W A P Power Dissipation (T = 25C) 49 W D C - Derate above 25C 0.39 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQD5N60CTM / Symbol Parameter Unit FQU5N60CTU R Thermal Resistance, Junction-to-Case, Max. 2.56 JC Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. 110 C/W R JA 2 50 Thermal Resistance, Junction-to-Ambient (* 1 in pad of 2 oz copper), Max. 2003 Semiconductor Components Industries, LLC. Publication Order Number: October-2017,Rev.3 FQU5N60C /D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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