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V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I =-1.85 A D planar stripe and DMOS technology. This advanced Low Gate Charge ( Typ. 10 nC) MOSFET technology has been especially tailored to Low Crss ( Typ. 12 pF) reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy RoHS Compliant strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications S D G G I-PAK S D-PAK G D S D Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQD5P20 TM / FQU5P20 TU Unit V Drain-Source Voltage -200 V DSS I - Continuous (T = 25C) Drain Current -3.7 A D C - Continuous (T = 100C) -2.34 A C I Drain Current - Pulsed (Note 1) -14.8 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 330 mJ AS I Avalanche Current (Note 1) -3.7 A AR E (Note 1) Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 45 W C - Derate above 25C 0.36 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQD5P20 TM Symbol Parameter Unit FQU5P20 TU 2.78 R Thermal Resistance, Junction to Case, Max . JC o 110 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. C/W R JA 2 50 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. www.fairchildsemi.com 2009 Fairchild Semiconductor Corporation 1 FQD5P20 / FQU5P20 Rev. C0