BF5030WH6327XTSA1 Infineon

BF5030... Silicon N-Channel MOSFET Tetrode Designed for input stages of UHF- and 3 VHF-tuners with AGC function 2 4 Supporting 5 V operations and 1 power saving 3 V operations Integrated ESD gate protection diodes Very low noise figure High gain, high forward transadmittance Very good cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101 Drain HF Output +DC G2 AGC G1 HF Input R G1 GND V GG EHA07461 ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Pin Configuration Marking BF5030 SOT143 1=S 2=D 3=G2 4=G1 - - KXs BF5030R SOT143R 1=D 2=S 3=G1 4=G2 - - KXs BF5030W SOT343 1=D 2=S 3=G1 4=G2 - - KXs 1 2009-05-05BF5030... Maximum Ratings Parameter Symbol Value Unit 8 V Drain-source voltage V DS 25 mA Continuous drain current I D Gate 1/ gate 2-source current I , I 1 mA G1S G2S Gate 1/ gate 2-source voltage V , V 6 V G1S G2S mW Total power dissipation P tot TS 94 C, BF5030W 200 TS 76 C, BF5030, BF5030R 200 C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch Thermal Resistance Parameter Symbol Value Unit 1) K/W Channel - soldering point R thchs BF5030W 280 BF5030, BF5030R 370 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2009-05-05