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FQD8P10 / FQU8P10 P-Channel QFET MOSFET November 2013 FQD8P10 / FQU8P10 P-Channel QFET MOSFET -100 V, -6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is -6.6 A, -100 V, R = 530 m (Max) V = -10 V, DS(on) GS I = -3.3 A produced using Fairchild Semiconductors proprietary D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior Low Crss (Typ. 30 pF) switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S D G G S I-PAK D-PAK G D S D o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQD8P10 TM / FQU8P10 TU Unit V Drain-Source Voltage -100 V DSS I Drain Current - Continuous (T = 25C) -6.6 A D C - Continuous (T = 100C) -4.2 A C I Drain Current - Pulsed (Note 1) -26.4 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 150 mJ AS I (Note 1) Avalanche Current -6.6 A AR E Repetitive Avalanche Energy (Note 1) 4.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns Power Dissipation (T = 25C) * P 2.5 W A D Power Dissipation (T = 25C) 44 W C - Derate above 25C 0.35 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQD8P10TM Symbol Parameter Unit FQU8P10TU R Thermal Resistance, Junction to Case, Max. 2.84 JC o Thermal Resistance, Junction to Ambient ( Minimum Pad of 2 -oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD8P10 / FQU8P10 Rev. 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