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V = 10V, I = 18 A The SupreMOS MOSFET is Fairchild Semiconductors next DS(on) GS D generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Q = 86 nC) g employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and Low Effective Output Capacitance (Typ. C = 338 pF) oss(eff.) precise process control provides lowest Rsp on-resistance, 100% Avalanche Tested superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- RoHS Compliant verter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Supre- Application MOS FRFET MOSFETs optimized body diode reverse recov- ery performance can remove additional component and Solar Inverter improve system reliability. AC-DC Power Supply D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCA36N60NF Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o Continuous (T = 25 C) 34.9 C I Drain Current A D o Continuous (T = 100 C) 22 C I Drain Current Pulsed (Note 1) 104.7 A DM E Single Pulsed Avalanche Energy (Note 2) 1800 mJ AS I Avalanche Current (Note 1) 12 A AR E Repetitive Avalanche Energy (Note 1) 3.12 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 50 o (T = 25 C) 312 W C P Power Dissipation D o o Derate Above 25C2.6W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCA36N60NF Unit R Thermal Resistance, Junction to Case, Max. 0.40 JC o R Thermal Resistance, Case to Heat Sink, Typ. 0.24 C/W CS R Thermal Resistance, Junction to Ambient, Max. 40 JA 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCA36N60NF Rev. C2