X-On Electronics has gained recognition as a prominent supplier of BUK6213-30C,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK6213-30C,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK6213-30C,118 NXP

BUK6213-30C,118 electronic component of NXP
BUK6213-30C,118 NXP
BUK6213-30C,118 MOSFETs
BUK6213-30C,118  Semiconductors

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See Product Specifications
Part No. BUK6213-30C,118
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET N-CHAN 30V 47A
Datasheet: BUK6213-30C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.3511
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0011
10 : USD 0.8726
100 : USD 0.6734
500 : USD 0.4988
N/A

Obsolete
0

Multiples : 10000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.718
10 : USD 0.5905
100 : USD 0.3805
1000 : USD 0.3197
2500 : USD 0.2941
10000 : USD 0.2941
25000 : USD 0.2824
50000 : USD 0.2789
100000 : USD 0.2719
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK6213-30C,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK6213-30C,118 and other electronic components in the MOSFETs category and beyond.

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BUK6213-30C N-channel TrenchMOS intermediate level FET Rev. 01 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drives 1.3 Applications 12 V automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current V =10V T =25C --47 A D GS mb see Figure 1 P total power dissipation T =25C see Figure 2 --60 W tot mb Static characteristics R drain-source on-state V =10V I =10A -11.914 m DSon GS D resistance T =25C see Figure 11 j Avalanche ruggedness non-repetitive I =47A V 30 V --30 mJ E DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =24V -4.77-nC GD D DS V =10V see Figure 13 GS see Figure 14BUK6213-30C Nexperia N-channel TrenchMOS intermediate level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6213-30C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK6213-30C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 4 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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