X-On Electronics has gained recognition as a prominent supplier of BUK6217-55C,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK6217-55C,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK6217-55C,118 NXP

BUK6217-55C,118 electronic component of NXP
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Part No.BUK6217-55C,118
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET N-CHAN 55V 44A
Datasheet: BUK6217-55C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.4207
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1912
10 : USD 1.0462
100 : USD 0.8069
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8247
10 : USD 0.6826
100 : USD 0.4401
1000 : USD 0.3527
2500 : USD 0.3519
10000 : USD 0.3519
25000 : USD 0.3387
50000 : USD 0.3338
100000 : USD 0.3254
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK6217-55C,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK6217-55C,118 and other electronic components in the MOSFETs category and beyond.

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BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 3 9 July 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V and 24 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --55 V DS j j I drain current V =10V T =25C --44 A D GS mb see Figure 1 P total power dissipation T = 25 C see Figure 2 --80 W tot mb Static characteristics R drain-source on-state resistance V =10V I =12A T =25C - 1619m DSon GS D j see Figure 11 Dynamic characteristics gate-drain charge I =25A V =44 V V =10V - 11.2 - nC Q GD D DS GS see Figure 13 see Figure 14 Avalanche ruggedness E non-repetitive drain-source I =44A V 55 V R =50 --45 mJ DS(AL)S D sup GS avalanche energy V =10V T =25C GS j(init) unclampedBUK6217-55C Nexperia N-channel TrenchMOS intermediate level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 DPAK (SOT428) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6217-55C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK6217-55C BUK6217-55C BUK6217-55C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 9 July 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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