X-On Electronics has gained recognition as a prominent supplier of BUK6610-75C,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK6610-75C,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK6610-75C,118 Nexperia

BUK6610-75C,118 electronic component of Nexperia
BUK6610-75C,118 Nexperia
BUK6610-75C,118 MOSFETs
BUK6610-75C,118  Semiconductors

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See Product Specifications
Part No. BUK6610-75C,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHAN 75V 78A
Datasheet: BUK6610-75C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5173 ea
Line Total: USD 1.52 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 800
Multiples : 800
800 : USD 0.7386

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 1.5995
10 : USD 1.421
100 : USD 1.1229

0
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 1.5173
10 : USD 1.0693
100 : USD 0.7965
500 : USD 0.7516
800 : USD 0.5452
2400 : USD 0.5258
9600 : USD 0.5189
24800 : USD 0.5019

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Transistor Type
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK6610-75C,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK6610-75C,118 and other electronic components in the MOSFETs category and beyond.

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BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power EngineMotors, lamps and solenoid switching control management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --75 V DS j j I drain current V =10V T =25C --78 A D GS mb see Figure 1 P total power dissipation T = 25 C see Figure 2 --158W tot mb Static characteristics R drain-source on-state V =10V I =25A -8.6 10 m DSon GS D resistance T =25C see Figure 11 jBUK6610-75C Nexperia N-channel TrenchMOS FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =78A V 75 V --121mJ DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =60V -30 -nC GD D DS V = 10 V see Figure 13 GS see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6610-75C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK6610-75C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 14 October 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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