X-On Electronics has gained recognition as a prominent supplier of BUK661R8-30C MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK661R8-30C MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK661R8-30C NXP

BUK661R8-30C electronic component of NXP
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Part No.BUK661R8-30C
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 120A Automotive 3-Pin(2+Tab) D2PAK
Datasheet: BUK661R8-30C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 3.5417 ea
Line Total: USD 35.42 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Transistor Polarity
Mounting Style
Channel Mode
Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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We are delighted to provide the BUK661R8-30C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK661R8-30C and other electronic components in the MOSFETs category and beyond.

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Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) D2PAK
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BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 2.1 18 August 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current V =10 V T =25C --120A D GS mb see Figure 1 P total power dissipation T =25 C see Figure 2 --263W tot mb Static characteristics R drain-source on-state V =10 V I =25A -1.6 1.9 m DSon GS D resistance T = 25 C see Figure 11 j D2PAKBUK661R8-30C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain-source I = 120 A V 30 V --0.87J DS(AL)S D sup avalanche energy R =50 V =10V GS GS T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =24V -45 -nC GD D DS V =10V GS see Figure 13 see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK661R8-30C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK661R8-30C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2.1 18 August 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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