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X-On Electronics has gained recognition as a prominent supplier of BUK663R5-55C MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK663R5-55C MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK663R5-55C NXP

BUK663R5-55C electronic component of NXP
BUK663R5-55C NXP
BUK663R5-55C MOSFETs
BUK663R5-55C  Semiconductors

Images are for reference only
See Product Specifications
Part No. BUK663R5-55C
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK
Datasheet: BUK663R5-55C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 3.7528 ea
Line Total: USD 33.78 
Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Gate-Source Voltage Max
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK663R5-55C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK663R5-55C and other electronic components in the MOSFETs category and beyond.

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Trans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Image Part-Description
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BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V and 24 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage 1 I drain current V =10V T =25C --120A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --263W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 2.86 3.4 m DSon GS D on-state T =25C see Figure 12 j resistance D2PAKBUK663R5-55C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =120 A V 55 V --455mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) see Figure 3 Dynamic characteristics Q gate-drain charge I =25A V =40V -56 - nC GD D DS V = 10 V see Figure 15 GS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK663R5-55C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK663R5-55C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 23 December 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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