BUK663R7-75C NXP

BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage 1 I drain current V =10V T =25C --120A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --306W tot mb dissipation Static characteristics R drain-source V =10V I =25A -3.4 4 m DSon GS D on-state T =25C see Figure 11 j resistance see Figure 12 Avalanche ruggedness E non-repetitive I =120 A V 75 V --523mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) 1 Continuous current is limited by package.BUK663R7-75C NXP Semiconductors N-channel TrenchMOS FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK663R7-75C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK663R7-75C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 15 September 2010 2 of 14