BUK7109-75ATE,118 NXP

BUK7109-75ATE N-channel TrenchPLUS standard level FET Rev. 02 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Low conduction losses due to low monitoring due to integrated on-state resistance temperature sensor Q101 compliant Electrostatically robust due to Suitable for standard level gate drive integrated protection diodes sources 1.3 Applications Electrical Power Assisted Steering Variable Valve Timing for engines (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j Static characteristics R drain-source V =10V I =50A - 89m DSon GS D on-state resistance T = 25 C see Figure 7 j see Figure 8 S temperature sense I =250 A T -55 C -1.4 -1.54 -1.68 mV/K F(TSD) F j diode temperature T 175 C j coefficient V temperature sense I =250 A T = 25 C 648 658 668 mV F(TSD) F j diode forward voltageNXP Semiconductors BUK7109-75ATE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D A 2 A anode 3D drain G 4 K cathode 5S source 3 mb D mounting base connected to S K 1245 mbl317 drain SOT426 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7109-75ATE D2PAK plastic single-ended surface-mounted package (D2PAK) 5 leads (one SOT426 lead cropped) BUK7109-75ATE 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 10 February 2009 2 of 15