BUK714R1-40BT,118 NXP

BUK714R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The devices include TrenchPLUS diodes for temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Q101 compliant monitoring due to integrated Suitable for thermally demanding temperature sensor environments due to 175 C rating Low conduction losses due to low on-state resistance 1.3 Applications 12 V loads General purpose power switching Electrical Power Assisted Steering Motors, lamps and solenoids (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10V T =25C 1 --75 A D GS mb see Figure 2 see Figure 3 V =10V T =100 C 1 --75 A GS mb see Figure 2 P total power T = 25 C see Figure 1 - - 272 W tot mb dissipation Static characteristics R drain-source V =10V I =50A -3.4 4.1 m DSon GS D on-state resistance T = 25 C see Figure 7 j see Figure 8 1 Continuous current is limited by package.NXP Semiconductors BUK714R1-40BT N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate da mb 2 A anode 3D drain 4 K cathode g 5S source 3 mb D mounting base connected to 1245 03nm72 sk drain SOT426 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK714R1-40BT D2PAK plastic single-ended surface-mounted package (D2PAK) 5 leads (one SOT426 lead cropped) BUK714R1-40BT 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 10 February 2009 2 of 13