BUK7210-55B,118 Nexperia

BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits 185 C rated Standard level compatible Q101 compliant Very low on-state resistance 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 185 C - - 55 V DS j j I drain current V =10V T =25C 1 --75 A D GS mb see Figure 1 see Figure 3 Static characteristics R drain-source V =10V I =25A -8.5 10 m DSon GS D on-state resistance T = 25 C see Figure 10 j see Figure 9 Avalanche ruggedness E non-repetitive I =75 A V 55 V - - 173 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) inductive load 1 Continuous current is limited by package.Nexperia BUK7210-55B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 1 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (SC-63 DPAK) 1 It is not possible to make connection to pin 2 of the SOT428 package. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7210-55B SC-63 plastic single-ended surface-mounted package (DPAK) 3 leads (one SOT428 DPAK lead cropped) BUK7210-55B 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 11 December 2008 2 of 14