BUK7608-40B,118 Nexperia

BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10V T =25C 1 --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 157 W tot mb dissipation Avalanche ruggedness E non-repetitive I =75 A V 40 V - - 241 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -12 -nC GD GS D V =32V T =25C see DS j Figure 14 Static characteristics R drain-source V =10V I =25A -6.6 8 m DSon GS D on-state resistance T = 25 C see Figure 12 j see Figure 11 1 Continuous current is limited by package.Nexperia BUK7608-40B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 1 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7608-40B D2PAK Plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R =20k -40 V DGR GS V gate-source voltage -20 20 V GS I drain current T =25C V =10V see Figure 1 see Figure 1 -101 A D mb GS 3 T =100 C V = 10 V see Figure 1 1 -71 A mb GS T =25C V =10V see Figure 1 see Figure 2 -75 A mb GS 3 I peak drain current T =25C t 10 s pulsed see Figure 3 -407 A DM mb p P total power dissipation T =25C see Figure 2 -157 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C 1 -101 A S mb T =25C 2 -75 A mb I peak source current t 10 s pulsed T =25C - 407 A SM p mb BUK7608-40B 4 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 24 September 2008 2 of 12