BUK7609-75A NXP

BUK7609-75A N-channel TrenchMOS standard level FET Rev. 03 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --230W tot mb dissipation Static characteristics R drain-source V =10V I =25A --18.9m DSon GS D on-state T = 175 C see Figure 11 j resistance see Figure 12 V =10V I =25A -7.7 9 m GS D T =25C see Figure 11 j see Figure 12 Avalanche ruggedness E non-repetitive I =75A V 75 V --560mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) D2PAKBUK7609-75A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7609-75A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 75 V DS j j V drain-gate voltage R =20k -75 V DGR GS V gate-source voltage -20 20 V GS I drain current T =25C V =10V see Figure 1 -75 A D mb GS see Figure 3 T =100 C V = 10 V see Figure 1 -65 A mb GS I peak drain current T = 25 C pulsed t 10 s - 440 A DM mb p see Figure 3 P total power dissipation T =25C see Figure 2 - 230 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 75 A S mb I peak source current pulsed t 10 s T = 25 C - 440 A SM p mb Avalanche ruggedness E non-repetitive drain-source I =75A V 75 V R =50 - 560 mJ DS(AL)S D sup GS avalanche energy V =10V T = 25 C unclamped GS j(init) BUK7609-75A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 18 February 2011 2 of 13