X-On Electronics has gained recognition as a prominent supplier of BUK7610-100B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7610-100B,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7610-100B,118 Nexperia

BUK7610-100B,118 electronic component of Nexperia
BUK7610-100B,118 Nexperia
BUK7610-100B,118 MOSFETs
BUK7610-100B,118  Semiconductors

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Part No. BUK7610-100B,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 100 V 75A (Tc) 300W (Tc) Surface Mount D2PAK
Datasheet: BUK7610-100B,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.8375 ea
Line Total: USD 3.84 
Availability - 1052
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1052
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 3.8375
10 : USD 2.6565
25 : USD 2.277
100 : USD 2.013
250 : USD 1.892
500 : USD 1.793
800 : USD 1.738
2400 : USD 1.705
4800 : USD 1.661

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
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Hts Code
Mxhts
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Typical Turn-On Delay Time
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We are delighted to provide the BUK7610-100B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7610-100B,118 and other electronic components in the MOSFETs category and beyond.

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BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 1 Fig. 3 1 - - 75 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 300 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 8.6 10 m DSon GS D j resistance Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 80 V - 22 - nC GD GS D DS T = 25 C Fig. 13 j Avalanche ruggedness E non-repetitive drain- I = 75 A V 100 V R = 50 - - 629 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energyNexperia BUK7610-100B N-channel TrenchMOS standard level FET 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 G gate 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7610-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK7610-100B BUK7610-100B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -20 20 V GS I drain current T = 25 C V = 10 V Fig. 1 Fig. 3 1 - 110 A D mb GS 2 - 75 A T = 100 C V = 10 V Fig. 1 2 - 75 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 438 A DM mb p BUK7610-100B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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