BUK7635-55A,118 Nexperia

BUK7635-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --55 V DS j j I drain current V =10V T =25C --35 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --85 W tot mb dissipation Static characteristics R drain-source on-state V =10V I =20A T =25C - 3035m DSon GS D j resistance see Figure 11 see Figure 12 Avalanche ruggedness E non-repetitive I =14A V 55 V --49 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init)BUK7635-55A Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7635-55A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R =20k -55 V DGR GS V gate-source voltage -20 20 V GS I drain current T =25C V =10 V see Figure 1 -35 A D mb GS see Figure 3 T = 100 C V = 10 V see Figure 1 -25 A mb GS I peak drain current T = 25 C pulsed t 10 s - 139 A DM mb p see Figure 3 P total power dissipation T =25C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 35 A S mb I peak source current pulsed t 10 s T = 25 C - 139 A SM p mb Avalanche ruggedness E non-repetitive drain-source I =14A V 55 V R =50 -49 mJ DS(AL)S D sup GS avalanche energy V =10 V T = 25 C unclamped GS j(init) BUK7635-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 27 January 2011 2 of 13