X-On Electronics has gained recognition as a prominent supplier of BUK763R6-40C,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK763R6-40C,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK763R6-40C,118 NXP

BUK763R6-40C,118 electronic component of NXP
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Part No.BUK763R6-40C,118
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 40V 167A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet: BUK763R6-40C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 3.7528 ea
Line Total: USD 33.78 
Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the BUK763R6-40C,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK763R6-40C,118 and other electronic components in the MOSFETs category and beyond.

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BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive Avalanche robust Suitable for thermally demanding environment up to 175C rating 1.3 Applications 12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation (PWM) applicationsBUK763R6-40C NXP Semiconductors N-channel TrenchMOS standard level FET 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --40 V DS j j voltage 1 I drain current V =10V T =25C --100A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --203W tot mb dissipation Static characteristics R drain-source V =10V I =25A -3 3.6 m DSon GS D on-state T =25C j resistance see Figure 11 see Figure 12 Avalanche ruggedness E non-repetitive I =100 A V 40 V --292mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -35 - nC GD GS D V =32 V T =25C DS j see Figure 14 see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK763R6-40C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK763R6-40C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 16 June 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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