BUK7226-75A NXP

BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features 175 C rated Low on-state resistance Q101 compliant Standard level compatible 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C--75V DS j j 1 I drain current V =10 V T =25 C -- 45 A D GS mb see Figure 1 and 4 P total power dissipation T =25 C see Figure 2 -- 158W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10 V I =25A -22 26 m DSon GS D resistance T =25 C see Figure 12 and j 13 Avalanche ruggedness E non-repetitive I =45A V 75 V -- 215mJ DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T =25 C unclamped j(init) inductive load 1 Capped at 45 A due to bondwire.NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3 S source G mb D mounting base mbb076 S connected to drain 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7226-75A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads (one lead SOT428 cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-75V DS j j V drain-gate voltage R =20k -75 V DGR GS V gate-source voltage -20 20 V GS 1 I drain current T =25 C V = 10 V see Figure 1 and 4 -45 A D mb GS T = 100 C V = 10 V see Figure 1 -38 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 215 A DM mb p P total power dissipation T =25 C see Figure 2 - 158 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =45A V 75 V R =50 - 215 mJ DS(AL)S D sup GS drain-source avalanche V =10 V T =25 C unclamped GS j(init) energy inductive load 2 3 E repetitive drain-source see Figure 3 --J DS(AL)R 4 avalanche energy Source-drain diode 1 I source current T =25 C -45 A S mb I peak source current t 10 s pulsed T =25 C - 215 A SM p mb 1 Capped at 45 A due to bondwire. BUK7226-75A 2 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 22 February 2008 2 of 13